Salman Kahn

W. Shi, S. Kahn, L. Jiang, S.Y. Wang, H.Z. Tsai, D. Wong, K. Watanabe, T. Taniguchi, F.Wang, M. Crommie, A. Zettl. Direct reversible writing of high carrier density, high mobility circuitry into two-dimensional van der Waals heterostructures. Submitted, 2019.

Y. Chen, W. Ruan, M. Wu, S. Tang, H. Ryu, H.Z. Tsai, R. Lee, S. Kahn, F. Liou, C. Jia, O. Albertini, H. Xiong, T. Jia, Z. Liu, J. Sobota, A. Liu, J. Moore, Z.X. Shen, S. Louie, S. Mo, M. Crommie. Visualizing Exotic Orbital Texture in the Single-Layer Mott Insulator 1T-TaSe₂. arXiv, 2019.

A. Azizi, G. Antonius, E. Regan, R. Eskandari, S. Kahn, F. Wang, S. Louie, A. Zettl. Layer-Dependent Electronic Structure of Atomically Resolved Two-Dimensional Gallium Selenide Telluride. Nano Letters, 19, 1782-1787, 2019.

J. Velasco Jr., J. Lee, D. Wong, S. Kahn, H. Tsai, J. Costello, T. Umeda, K. Watanabe, T. Taniguchi, A. Zettl, F. Wang, M. F. Crommie. Visualization and Control of Single-Electron Charging in Bilayer Graphene Quantum Dots. Nano Letters, 18, 5104-5110, 2018.

H. Ryu, Y. Chen, H. Kim, H. Tsau, S. Tang, J. Jiang, F. Liou, S. Kahn, C. Jia, A. Omrani, J. Shim, Z. Hussain, Z. X. Shen, K. Kim, B. Min, C. Hwang, M. Crommie, S. Mo. Persistent charge-density-wave order in single-layer TaSe₂. Nano Letters, 18, 689-694, 2018.

K. Yao, A. Yan, S. Kahn, A. Suslu, Y. Liang, E. Barnard, S. Tongay, A. Zettl, N. Borys, P. Schuck. Optically discriminating carrier-induced quasiparticle band gap and exciton energy renormalization in monolayer MoS₂. Physical Review Letters, 119, 087401, 2017.

J. Kim, C. Jin, B. Chen, H. Cai, T. Zhao, P. Lee, S. Kahn, K. Watanabe, T. Taniguchi, S. Tongay, M. Crommie, F. Wang. Observation of ultralong valley lifetime in WSe₂/MoS₂ heterostructures. Science Advances, 3, e1700518, 2017.

S. Tang, C. Zhang, D. Wong, Z. Pedramrazi, H. Tsai, C. Jia, B. Moritz, M. Claassen, H. Ryu, S. Kahn, J. Jiang, H. Yan, M. Hashimoto, D. Lu, R. Moore, C. Hwang, C. Hwang, Z. Hussain, Y. Chen, M. Ugeda, Z. Liu, X. Xie, T. Devereaux, M. Crommie, S. Mo, Z. Shen. Quantum spin Hall state in monolayer 1T’-WTe₂. Nature Physics, 13, 683-687, 2017.

T. Joshi, J. Kang, L. Jiang, S. Wang, T. Tarigo, T. Lyu, S. Kahn, Z. Shi, R. Shen, M. Crommie, F. Wang. Coupled One-dimensional Plasmons and Two-dimensional Phonon Polaritons in Hybrid Silver Nanowire/Silicon Carbide Structures. Nano Letters, 17, 3662-3667, 2017.

C. Ojeda-Aristizabal, E. Santos, S. Onishi, A. Yan, H. Rasool, S. Kahn, L. Yinchuan, D. Latzke, J. Velasco Jr., M. Sorenson, K. Gotlieb, C. Lin, K. Watanabe, T. Taniguchi, A. Lanzara, A. Zettl. Molecular arrangement and charge transfer in C₆₀/graphene heterostructures. ACS Nano, 11, 4686-4693, 2017.

J. Lee, D. Wong, J. Velasco Jr., J. F. Rodriguez-Nieva, S. Kahn, H. Tsai, K. Watanabe, T. Taniguchi, A. Zettl, F. Wang, L. Levitov, M. F. Crommie. Imaging electrostatically confined Dirac fermions in graphene quantum dots. Nature Physics, 12, 1032-1036, 2016.

J. Velasco Jr., L. Ju, D. Wong, S. Kahn, J. Lee, H. Tsai, C. Germany, S. Wickenburg, J. Lu, K. Watanabe, T. Taniguchi, A. Zettl, F. Wang, M. F. Crommie. Nanoscale Control of Rewriteable Doping Patterns in Pristine Graphene/Boron Nitride Heterostructures. Nano Letters, 2016.

D. Wong (黃家和), Y. Wang(汪洋), J. Jung (정재일), , A. DaSilva, H. Tsai, H. Jung, R. Khajeh, Y. Kim (김영규), J. Lee (이주원), S. Kahn (成吉思汗), S. Tollabimazraehno, H. Rasool, K. Watanabe, T. Taniguchi, A. Zettl, S. Adam, A. MacDonald, M. F. Crommie. Local spectroscopy of moiré-induced electronic structure in gate-tunable twisted bilayer graphene. Phys. Rev. B, 92, 155409, 2015.

A. Yan, J. Velasco Jr., S. Kahn, T. Taniguchi, K. Watanabe, F. Wang, M. F. Crommie, A. Zettl. Direct growth of single- and few-layer MoS₂ on h-BN with preferred relative rotation angles. Nano Letters, 15, 6324-6331, 2015.

D. Wong, J. Velasco Jr., L. Ju, J. Lee, S. Kahn, H. Tsai, C. Germany, T. Taniguchi, K. Watanabe, A. Zettl, F. Wang, M. F. Crommie. Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunneling microscopy. Nature Nanotechnology, 10, 949-953, 2015.

H. Jung, J. Velasco Jr., H. Tsai, D. Wong, C. Germany, S. Kahn, Y. Kim, A. Aikawa, D. Dhruv, G. Rodgers, A. Bradley, J. Velasco Jr., A. Zettl, M. F. Crommie. Fabrication of gate-tunable graphene devices for scanning tunneling microscopy studies with coulomb impurities. JoVE, 101, e52711, 2015.

D. Wong, J. Velasco Jr., L. Ju, S. Kahn, J. Lee, C. Germany, A. Zettl, F. Wang, M. F. Crommie. Local doping of two-dimensional materials. US Patent US9449851B2, 2017.

L. Ju, J. Velasco Jr., E. Huang, S. Kahn, C. Nosiglia, H. Tsai, W. Yang, T. Taniguchi, K. Watanabe, Y. Zhang, G. Zhang, M. F. Crommie, A. Zettl, F. Wang. Photoinduced doping in heterostructures of graphene and boron nitride. Nature Nanotechnology, 9, 348–352, 2014.